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Description: DIODE GEN PURP 200V 1A SUB SMA
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
5 µA @ 200 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
950 mV @ 1 A |
Package: |
Tape & Reel (TR) |
Series: |
Automotive, AEC-Q101 |
Capacitance @ Vr, F: |
10pF @ 4V, 1MHz |
Supplier Device Package: |
Sub SMA |
Reverse Recovery Time (trr): |
35 ns |
Mfr: |
Taiwan Semiconductor Corporation |
Technology: |
Standard |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Package / Case: |
DO-219AB |
Voltage - DC Reverse (Vr) (Max): |
200 V |
Current - Average Rectified (Io): |
1A |
Speed: |
Fast Recovery =< 500ns, > 200mA (Io) |
Base Product Number: |
ES1D |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
5 µA @ 200 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
950 mV @ 1 A |
Package: |
Tape & Reel (TR) |
Series: |
Automotive, AEC-Q101 |
Capacitance @ Vr, F: |
10pF @ 4V, 1MHz |
Supplier Device Package: |
Sub SMA |
Reverse Recovery Time (trr): |
35 ns |
Mfr: |
Taiwan Semiconductor Corporation |
Technology: |
Standard |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Package / Case: |
DO-219AB |
Voltage - DC Reverse (Vr) (Max): |
200 V |
Current - Average Rectified (Io): |
1A |
Speed: |
Fast Recovery =< 500ns, > 200mA (Io) |
Base Product Number: |
ES1D |
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