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Description: DIODE GP 1.1KV 1.4A E AXIAL
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
4 µA @ 1100 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.6 V @ 1.4 A |
Package: |
Bulk |
Series: |
- |
Capacitance @ Vr, F: |
40pF @ 10V, 1MHz |
Supplier Device Package: |
E, Axial |
Reverse Recovery Time (trr): |
80 ns |
Mfr: |
Microchip Technology |
Technology: |
Standard |
Operating Temperature - Junction: |
-65°C ~ 150°C |
Package / Case: |
E, Axial |
Voltage - DC Reverse (Vr) (Max): |
1100 V |
Current - Average Rectified (Io): |
1.4A |
Speed: |
Fast Recovery =< 500ns, > 200mA (Io) |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
4 µA @ 1100 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.6 V @ 1.4 A |
Package: |
Bulk |
Series: |
- |
Capacitance @ Vr, F: |
40pF @ 10V, 1MHz |
Supplier Device Package: |
E, Axial |
Reverse Recovery Time (trr): |
80 ns |
Mfr: |
Microchip Technology |
Technology: |
Standard |
Operating Temperature - Junction: |
-65°C ~ 150°C |
Package / Case: |
E, Axial |
Voltage - DC Reverse (Vr) (Max): |
1100 V |
Current - Average Rectified (Io): |
1.4A |
Speed: |
Fast Recovery =< 500ns, > 200mA (Io) |
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